DTZ model with independent subsystems

Data envelopment analysis (DEA) is a mathematical programming approach to assess relative efficiency of a group of decision-making units. In view of the defects of existing models in evaluating efficiency of the system with P independent subsystems, Yang et al. [10] introduced YMK model with the assumption that decision-making unit (DMU) is independent of each other. But in some production systems, decision-making units usually have some relationships in this way or that. In this paper, DEA model is given by assuming that DMUs can cooperate with others in its subgroups. Some property and the efficiency relationship of the whole system and its subsystems are given.     

Velocity field vortices and Mermin-Ho vortices in two-component spinor BEC

In light of the φ-mapping topological current theory, two important vortex structures in two-component spinor BEC—the velocity field vortices and the Mermin-Ho vortices are discussed. It is revealed that these two different kinds of vortices are created respectively from the zero points of two different order parameter configurations in the condensates, and both their topological charges, locations and motions can be determined by the φ-mapping theory.     

纳米晶体ZnS：Mn2+发光寿命异常减缩机理的探讨

纳米晶体ZnS:Mn²⁺中Mn²⁺粒子⁴T₁→⁶A₁的发光寿命比晶体减缩了5个量级,这颇令人费解,因为通常解除自旋禁戒的磁作用远无如此强的效应.假定基质态的自旋不为零,且考虑了Mn²⁺的d电子和基质之间的交换库仑作用.若基质存在比Mn²⁺的⁴T₁激发态能量略高的某种激发态,则这种交换库仑作用将导致这两种激发态之间的混合,从而可解除发光能级弛豫中的自旋禁戒.这种混合随基质颗粒尺寸的减小而加强.我们并对此机制进行粗略的数值估计,给出了和实验相容的结果.     

Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer

Large-scale GaN free-standing substrate was obtained by hydride vapor phase epitaxy directly on sapphire with porous network interlayer. The bottom surface N-face and top surface Ga-face showed great difference in anti-etching and optical properties. The variation of optical and structure characteristics were also microscopically identified using spatially resolved cathodoluminescence and micro-Raman spectroscopy in cross-section of the GaN substrate. Three different regions were separated according to luminescent intensity along the film growth orientation. Some tapered inversion domains with high free carrier concentration of 5 × 10¹⁹ cm⁻³ protruded up to the surface forming the hexagonal pits. The dark region of upper layer showed good crystalline quality with narrow donor bound exciton peak and low free carrier concentration. Unlike the exponential dependence of the strain distribution, the free-standing GaN substrate revealed a gradual increase of the strain mainly within the near N-polar side region with a thickness of about 50 μm, then almost kept constant to the top surface.     

A Finite Element Method for Singularly Perturbed Reaction—diffusion Problems

A finite element method is proposed for the sing ularly perturbed reaction-diffusion problem.An optimal error bound is derived,independent of the perturbation parameter.     

利用场强与电势的关系计算非平行平板电容器的电容

对于非平行平板电容器,利用电场与电势的基本关系,求解微分方程,得到电容器的电容值.     

A chaotic function with a distributively scrambled set of full Lebesgue measure

Misiurewicz proved that there exists a continuous map of the interval [0, 1] onto itself for which there exists a scrambled set of full Lebesgue measure. In this paper, we form a continuous interval map which has a distributively scrambled set of full Lebesgue measure in which each point has dense orbit. This contains Misiurewicz’s result, since any distributively scrambled set must be scrambled but the converse is not generally true.     

核内核子部分子的逸出及共用与核子结构函数的核效应

在核介质中,可能存在非核子自由度,这些非核子自由度是核内核子中逸出的部分子组成的色单态集团.另外,由于核内部分子在核子运动方向上的不确定性,致使较小工的部分子的运动范围进入邻近核子,成为几个核子的共用部分子.在考虑了部分子逸出与共用的因素后,用有效核子质量一个参数,计算了束缚核子的结构函数,所得结果和NMC组最新实验数据符合甚好.     

β方石英的振动光谱和方石英的相变

利用价力场模型计算了β方石英振动光谱横模的全部基频和简正模式。基频的计算值与β方石英的喇曼和红外光谱的观测值符合得很好。由此提供了一组甚好的β方石英的力常数。讨论了方石英αβ相变，并提出α方石英的软模Ｂ２６ｃｍ－１在此相变中起着基本作用